IPD65R380E6ATMA1

new-10%

Manufacturer part number:IPD65R380E6ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 700V 10.6A Automotive 3-Pin(2+Tab) DPAK T/R

Case Package:SOT-23

Datasheet:IPD65R380E6ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™ E6
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	380m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 320μA
Input Capacitance (Ciss) (Max) @ Vds	710pF @ 100V
Current - Continuous Drain (Id) @ 25°C	10.6A Tc
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	57 ns
Continuous Drain Current (ID)	10.6A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Pulsed Drain Current-Max (IDM)	29A
Avalanche Energy Rating (Eas)	215 mJ
RoHS Status	ROHS3 Compliant