IPB80N08S406ATMA1

new-10%

Manufacturer part number:IPB80N08S406ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 75V 80A TO263-3

Case Package:SOT-23

Datasheet:IPB80N08S406ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	150W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 90μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	80A
Max Dual Supply Voltage	80V
Drain-source On Resistance-Max	0.0047Ohm
Pulsed Drain Current-Max (IDM)	320A
Avalanche Energy Rating (Eas)	270 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead