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SI7483ADP-T1-GE3

SI7483ADP-T1-GE3

SI7483ADP-T1-GE3

Vishay Siliconix

MOSFET 30V 24A 5.4W 5.7mohm @ 10V

SOT-23

SI7483ADP-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 14A Ta
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 33ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 210 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0057Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 60A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.058847 $1.058847
10 $0.998912 $9.98912
100 $0.942370 $94.237
500 $0.889028 $444.514
1000 $0.838706 $838.706

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