IPB80P04P4L08ATMA1

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Manufacturer part number:IPB80P04P4L08ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET P-CH 40V 80A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:IPB80P04P4L08ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max	75W Tc
Element Configuration	Single
Power Dissipation	75W
Turn On Delay Time	12 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	7.9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	2.2V @ 120μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	5430pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	92nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	42 ns
Continuous Drain Current (ID)	-80A
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	-40V
Drain to Source Breakdown Voltage	-40V
Height	4.4mm
Length	10mm
Width	9.25mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead