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IPW60R040C7XKSA1

IPW60R040C7XKSA1

IPW60R040C7XKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 40m Ω @ 24.9A, 10V ±20V 4340pF @ 400V 107nC @ 10V TO-247-3

SOT-23

IPW60R040C7XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™ C7
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 227W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 24.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1.24mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 50A
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.04Ohm
Pulsed Drain Current-Max (IDM) 211A
Avalanche Energy Rating (Eas) 249 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.20000 $13.2
10 $12.09000 $120.9
240 $10.42050 $2500.92
720 $9.02942 $6501.1824
1,200 $8.36170 $8.3617
IPW60R040C7XKSA1 Product Details

IPW60R040C7XKSA1 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 249 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4340pF @ 400V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.Peak drain current for this device is 211A, which is its maximum pulsed drain current.This device supports dual supply voltages maximally powered by 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IPW60R040C7XKSA1 Features


the avalanche energy rating (Eas) is 249 mJ
a continuous drain current (ID) of 50A
based on its rated peak drain current 211A.


IPW60R040C7XKSA1 Applications


There are a lot of Infineon Technologies
IPW60R040C7XKSA1 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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