IPD053N08N3GATMA1

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Manufacturer part number:IPD053N08N3GATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) TO-252 T/R

Case Package:SOT-23

Datasheet:IPD053N08N3GATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	150W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.3m Ω @ 90A, 10V
Vgs(th) (Max) @ Id	3.5V @ 90μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	4750pF @ 40V
Current - Continuous Drain (Id) @ 25°C	90A Tc
Gate Charge (Qg) (Max) @ Vgs	69nC @ 10V
Rise Time	66ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	90A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	80V
Avalanche Energy Rating (Eas)	190 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead