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IPD068N10N3GATMA1

IPD068N10N3GATMA1

IPD068N10N3GATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) TO-252 T/R

SOT-23

IPD068N10N3GATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.8m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4910pF @ 50V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 90A
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.0068Ohm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $1.08628 $2.17256
5,000 $1.04605 $5.23025

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