STW20NM60

new-10%

Manufacturer part number:STW20NM60

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 290m Ω @ 10A, 10V ±30V 1500pF @ 25V 54nC @ 10V TO-247-3

Case Package:SOT-23

Datasheet:STW20NM60 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	290mOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	650V
Technology	MOSFET (Metal Oxide)
Current Rating	20A
Base Part Number	STW20N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	192W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	192W
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	290m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	42 ns
Continuous Drain Current (ID)	20A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	80A
Avalanche Energy Rating (Eas)	650 mJ
Height	6.35mm
Length	50.8mm
Width	6.35mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free