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STF3LN80K5

  • STF3LN80K5
  • STF3LN80K5

STF3LN80K5

STF3LN80K5

STMicroelectronics

STF3LN80K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STF3LN80K5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ K5
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Base Part Number STF3LN
Power Dissipation-Max 20W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.25 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 102pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 2.63nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.23000 $1.23
10 $1.09100 $10.91
100 $0.86240 $86.24
500 $0.66880 $334.4
1,000 $0.52800 $0.528
3,000 $0.49280 $1.4784
5,000 $0.46816 $2.3408
STF3LN80K5 Product Details

STF3LN80K5 Description


MDmeshTM K5 technology is used to develop this STF3LN80K5 Power MOSFET, which is built on an innovative patented vertical structure. For applications needing great power density and efficiency, the outcome is a significant reduction in on-resistance and an ultra-low gate charge.



STF3LN80K5 Features


  • RDS(on) x region with the lowest RDS(on) in the industry

  • The best FoM (figure of merit) in the industry

  • Gate charge is really low.

  • Avalanche-proofed to the nth degree

  • Zener-protected



STF3LN80K5 Applications


Switching applications


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