IPD082N10N3GBTMA1

new-10%

Manufacturer part number:IPD082N10N3GBTMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 80A TO252-3

Case Package:SOT-23

Datasheet:IPD082N10N3GBTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	125W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.2m Ω @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75μA
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 50V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	80A
Drain-source On Resistance-Max	0.0082Ohm
Pulsed Drain Current-Max (IDM)	320A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	110 mJ
RoHS Status	RoHS Compliant