SFP9640 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
SFP9640 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1997
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
123W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
500mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1585pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
59nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
SFP9640 Product Details
SFP9640 Description
Power MOSFETSFP9640 is a metal oxide semiconductor field effect transistor (MOSFET) which specializes in dealing with high power voltage and current, and it is also a kind of power semiconductor. Compared with other power semiconductors (such as insulated gate bipolar transistors or thyristors), the advantage of power MOSFET is its fast switching speed and high efficiency at low voltage. Both the power MOSFET and IGBT have isolated gates, so it is easier to drive. The disadvantage of power MOSFET is that the gain is small, and sometimes the gate drive voltage is even lower than the actual voltage to be controlled.
The continuous evolution of MOSFET and complementary metal oxide semiconductor (CMOS) technology has been used in integrated circuits since 1960, which is why the design of power MOSFET has been realized. The principle of power MOSFET is the same as that of MOSFET in general signal level. Power MOSFET, commonly used in power electronics, is derived from signal-level MOSFET, which has been on sale since the 1970s.