IPT012N08N5ATMA1

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IPT012N08N5ATMA1

Manufacturer part number:IPT012N08N5ATMA1

Manufacturer:Infineon Technologies

Description:IPT012N08N5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPT012N08N5ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerSFN
Number of Pins	8
Transistor Element Material	SILICON
Manufacturer Package Identifier	PG-HSOF-8
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-F2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	375W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	375W
Case Connection	DRAIN
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2m Ω @ 150A, 10V
Vgs(th) (Max) @ Id	3.8V @ 280μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	17000pF @ 40V
Current - Continuous Drain (Id) @ 25°C	300A Tc
Gate Charge (Qg) (Max) @ Vgs	223nC @ 10V
Rise Time	31ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	82 ns
Continuous Drain Current (ID)	300A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	80V
Drain Current-Max (Abs) (ID)	52A
Drain to Source Breakdown Voltage	80V
Max Junction Temperature (Tj)	175°C
Height	2.4mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead