IPD144N06NGBTMA1

new-10%

Manufacturer part number:IPD144N06NGBTMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252

Case Package:SOT-23

Datasheet:IPD144N06NGBTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	136W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	135W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 30V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	50A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	200A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	240 mJ
RoHS Status	RoHS Compliant