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IPD200N15N3GATMA1

IPD200N15N3GATMA1

IPD200N15N3GATMA1

Infineon Technologies

IPD200N15N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPD200N15N3GATMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 75V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 150V
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 170 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.178779 $4.178779
10 $3.942244 $39.42244
100 $3.719099 $371.9099
500 $3.508583 $1754.2915
1000 $3.309984 $3309.984
IPD200N15N3GATMA1 Product Details

IPD200N15N3GATMA1 MOSFET Description


In comparison to the next-best competition, the 150V IPD200N15N3GATMA1 MOSFET uses the OptiMOSTM to reduce R DS(on) by 40% and figure of merit (FOM) by 45%. This significant advancement opens up new options, such as switching from led to SMD packaging or essentially replacing two outdated components with a single OptiMOSTM component. The part has less paralleling required and increased efficiency overall.



IPD200N15N3GATMA1 MOSFET Features


World's lowest R DS(on)

MSL1 rated 2

RoHS compliant-halogen free

Very low Q g and Q gd

Excellent gate charge x R DS(on) product (FOM)

Excellent switching performance



IPD200N15N3GATMA1 MOSFET Applications


Motor control for 48V–8 0V systems (i.e. domestic vehicles, power tools, trucks)

Synchronous rectification for AC-DC SMPS

Isolated DC-DC converters (telecom and datacom systems)

Uninterruptable power supplies (UPS)

Or-ing switches and circuit breakers in 48V systems

Class D audio amplifiers

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