IPD200N15N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IPD200N15N3GATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
OptiMOS™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
150W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
20m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 90μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
1820pF @ 75V
Current - Continuous Drain (Id) @ 25°C
50A Tc
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Rise Time
11ns
Drive Voltage (Max Rds On,Min Rds On)
8V 10V
Vgs (Max)
±20V
Fall Time (Typ)
6 ns
Turn-Off Delay Time
23 ns
Continuous Drain Current (ID)
50A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
150V
Drain-source On Resistance-Max
0.02Ohm
Pulsed Drain Current-Max (IDM)
200A
Avalanche Energy Rating (Eas)
170 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.178779
$4.178779
10
$3.942244
$39.42244
100
$3.719099
$371.9099
500
$3.508583
$1754.2915
1000
$3.309984
$3309.984
IPD200N15N3GATMA1 Product Details
IPD200N15N3GATMA1 MOSFET Description
In comparison to the next-best competition, the 150V IPD200N15N3GATMA1 MOSFET uses the OptiMOSTM to reduce R DS(on) by 40% and figure of merit (FOM) by 45%. This significant advancement opens up new options, such as switching from led to SMD packaging or essentially replacing two outdated components with a single OptiMOSTM component. The part has less paralleling required and increased efficiency overall.
IPD200N15N3GATMA1 MOSFET Features
World's lowest R DS(on)
MSL1 rated 2
RoHS compliant-halogen free
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Excellent switching performance
IPD200N15N3GATMA1 MOSFET Applications
Motor control for 48V–8 0V systems (i.e. domestic vehicles, power tools, trucks)
Synchronous rectification for AC-DC SMPS
Isolated DC-DC converters (telecom and datacom systems)
Uninterruptable power supplies (UPS)
Or-ing switches and circuit breakers in 48V systems