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IPD60R380P6ATMA1

IPD60R380P6ATMA1

IPD60R380P6ATMA1

Infineon Technologies

IPD60R380P6ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPD60R380P6ATMA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3
Weight 3.949996g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™ P6
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 83W Tc
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 320μA
Input Capacitance (Ciss) (Max) @ Vds 877pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 10.6A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Input Capacitance 877pF
Drain to Source Resistance 342mOhm
Rds On Max 380 mΩ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.85191 $1.70382
5,000 $0.82393 $4.11965
12,500 $0.80867 $9.70404
IPD60R380P6ATMA1 Product Details

IPD60R380P6ATMA1 Description


IPD60R380P6ATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 600V. The operating temperature of the IPD60R380P6ATMA1 is -55°C~150°C TJ and its maximum power dissipation is 83W Tc. IPD60R380P6ATMA1 has 3 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of IPD60R380P6ATMA1 is 12 ns and its Turn-Off Delay Time is 33 ns.



IPD60R380P6ATMA1 Features


  • Increased MOSFET dv/dt ruggedness

  • Extremely low losses due to very low FOM Rdson*Qg and Ross

  • Very high commutation ruggedness

  • Easy to use/drive

  • Pb-free plating, Halogen-free mold compound



IPD60R380P6ATMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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