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IPD60R520CPATMA1

IPD60R520CPATMA1

IPD60R520CPATMA1

Infineon Technologies

Trans MOSFET N-CH 600V 6.8A 3-Pin TO-252 T/R

SOT-23

IPD60R520CPATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 66W Tc
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 520mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6.8A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 74 ns
Continuous Drain Current (ID) 6.8A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Input Capacitance 630pF
Rds On Max 520 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant

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