SI1056X-T1-GE3

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Manufacturer part number:SI1056X-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V SC-89-6

Case Package:SOT-23

Datasheet:SI1056X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Power Dissipation-Max	236mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	6.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	89m Ω @ 1.32A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	8.7nC @ 5V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	1.32A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.089Ohm
Drain to Source Breakdown Voltage	20V
Nominal Vgs	950 mV
Radiation Hardening	No
RoHS Status	ROHS3 Compliant