STE40NK90ZD datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STE40NK90ZD Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Series
SuperFREDmesh™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
Screw
ECCN Code
EAR99
Resistance
170mOhm
Terminal Finish
Nickel (Ni)
Subcategory
FET General Purpose Power
Voltage - Rated DC
900V
Technology
MOSFET (Metal Oxide)
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
40A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STE40
Pin Count
4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
600W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
600W
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
180m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
4.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
25000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
40A Tc
Gate Charge (Qg) (Max) @ Vgs
826nC @ 10V
Rise Time
102ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
200 ns
Turn-Off Delay Time
450 ns
Continuous Drain Current (ID)
40A
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
900V
Dual Supply Voltage
900V
Nominal Vgs
3.75 V
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$49.77000
$4977
STE40NK90ZD Product Details
STE40NK90ZD Description
STE40NK90ZD is a type of N-channel super FREDMesh? MOSFET provided by STMicroelectronics based on an extreme optimization of the well-established strip-based PowerMESH? layout. It is able to push on-resistance significantly down and ensure a very good dv/dt capability for the most demanding applications.