IPD60R650CEBTMA1

new-10%

Manufacturer part number:IPD60R650CEBTMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 600V 7A TO252

Case Package:SOT-23

Datasheet:IPD60R650CEBTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	CoolMOS™ CE
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	82W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	650m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 100V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	20.5nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	7A
Drain-source On Resistance-Max	0.65Ohm
Pulsed Drain Current-Max (IDM)	19A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	133 mJ
RoHS Status	ROHS3 Compliant