IPD650P06NMATMA1

new-10%

Manufacturer part number:IPD650P06NMATMA1

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 60V TO252-3

Case Package:SOT-23

Datasheet:IPD650P06NMATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	OptiMOS™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	65m Ω @ 22A, 10V
Vgs(th) (Max) @ Id	4V @ 1.04mA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 30V
Current - Continuous Drain (Id) @ 25°C	22A Tc
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	22A
Drain-source On Resistance-Max	0.065Ohm
Pulsed Drain Current-Max (IDM)	88A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	329 mJ
RoHS Status	ROHS3 Compliant