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IPD65R400CEAUMA1

IPD65R400CEAUMA1

IPD65R400CEAUMA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 400m Ω @ 3.2A, 10V ±20V 710pF @ 100V 39nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

IPD65R400CEAUMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 118W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
Current - Continuous Drain (Id) @ 25°C 15.1A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 15.1A
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.4Ohm
Avalanche Energy Rating (Eas) 215 mJ
FET Feature Super Junction
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
IPD65R400CEAUMA1 Product Details

IPD65R400CEAUMA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 215 mJ.A device's maximum input capacitance is 710pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.Powered by 650V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.

IPD65R400CEAUMA1 Features


the avalanche energy rating (Eas) is 215 mJ
a continuous drain current (ID) of 15.1A


IPD65R400CEAUMA1 Applications


There are a lot of Infineon Technologies
IPD65R400CEAUMA1 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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