IPD65R420CFDBTMA1

new-10%

Manufacturer part number:IPD65R420CFDBTMA1

Manufacturer:Infineon Technologies

Description:Trans Mosfet N-ch 650V 8.7A 3-PIN TO-220FP T/r

Case Package:SOT-23

Datasheet:IPD65R420CFDBTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	CoolMOS™
Pbfree Code	no
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83.3W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	420m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id	4.5V @ 340μA
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 100V
Current - Continuous Drain (Id) @ 25°C	8.7A Tc
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	8.7A
Drain-source On Resistance-Max	0.42Ohm
Pulsed Drain Current-Max (IDM)	27A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	227 mJ
RoHS Status	ROHS3 Compliant