NIF9N05CLT1

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NIF9N05CLT1

Manufacturer part number:NIF9N05CLT1

Manufacturer:ON Semiconductor

Description:MOSFET 52V 2.6A N-Channel

Case Package:SOT-23

Datasheet:NIF9N05CLT1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	52V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	2.6A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max	1.69W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.69W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	125m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 35V
Current - Continuous Drain (Id) @ 25°C	2.6A Ta
Gate Charge (Qg) (Max) @ Vgs	7nC @ 4.5V
Rise Time	290ns
Drive Voltage (Max Rds On,Min Rds On)	3V 10V
Vgs (Max)	±15V
Fall Time (Typ)	290 ns
Turn-Off Delay Time	1.54 μs
Continuous Drain Current (ID)	2.6A
Gate to Source Voltage (Vgs)	15V
Drain-source On Resistance-Max	0.125Ohm
Drain to Source Breakdown Voltage	52V
Pulsed Drain Current-Max (IDM)	10A
Avalanche Energy Rating (Eas)	110 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead