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GA06JT12-247

GA06JT12-247

GA06JT12-247

GeneSiC Semiconductor

MOSFET SiC Super Junc Trans 1200V-Rds 230mO-6A

SOT-23

GA06JT12-247 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Operating Temperature 175°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 146W
Technology SiC (Silicon Carbide Junction Transistor)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Element Configuration Single
Rds On (Max) @ Id, Vgs 220m Ω @ 6A
Current - Continuous Drain (Id) @ 25°C 6A Tc 90°C
Drain to Source Voltage (Vdss) 1200V
Continuous Drain Current (ID) 6A
RoHS Status RoHS Compliant

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