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IPD65R660CFDATMA1

IPD65R660CFDATMA1

IPD65R660CFDATMA1

Infineon Technologies

MOSFET N-CH 650V 6A TO252

SOT-23

IPD65R660CFDATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 62.5W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 660m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 615pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.792470 $0.79247
10 $0.747613 $7.47613
100 $0.705296 $70.5296
500 $0.665373 $332.6865
1000 $0.627711 $627.711

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