FQPF9N50C   Description

  These N-channel enhanced power field effect transistors  FQPF9N50C  are produced using on Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are very suitable for efficient switching mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.

FQPF9N50C      Features

9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A

Low Gate Charge (Typ. 28 nC)

Low Crss (Typ. 24 pF)

100% Avalanche Tested

FQPF9N50C      Applications

efficient switching mode power supplies

 active power factor correction

 electronic lamp ballasts