Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FQPF9N50C

FQPF9N50C

FQPF9N50C

ON Semiconductor

FQPF9N50C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQPF9N50C Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 9A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 44W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 44W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 65ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 64 ns
Turn-Off Delay Time 93 ns
Continuous Drain Current (ID) 9A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.8Ohm
Drain to Source Breakdown Voltage 500V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.91000 $0.91
500 $0.9009 $450.45
1000 $0.8918 $891.8
1500 $0.8827 $1324.05
2000 $0.8736 $1747.2
2500 $0.8645 $2161.25
FQPF9N50C Product Details

FQPF9N50C   Description


  These N-channel enhanced power field effect transistors  FQPF9N50C  are produced using on Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are very suitable for efficient switching mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.

 

FQPF9N50C      Features

 

9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A

Low Gate Charge (Typ. 28 nC)

Low Crss (Typ. 24 pF)

100% Avalanche Tested

 

FQPF9N50C      Applications


efficient switching mode power supplies

 active power factor correction

 electronic lamp ballasts


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News