Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SI3440DV-T1-GE3

SI3440DV-T1-GE3

SI3440DV-T1-GE3

Vishay Siliconix

Single N-Channel 150 V 0.375 O 8 nC Surface Mount Power Mosfet - TSOP-6

SOT-23

SI3440DV-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 375mOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.14W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.14W
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 375m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.2A Ta
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 1.5A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Nominal Vgs 4 V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.65420 $1.9626
6,000 $0.62348 $3.74088
15,000 $0.60154 $9.0231

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News