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IPD80P03P4L07ATMA1

IPD80P03P4L07ATMA1

IPD80P03P4L07ATMA1

Infineon Technologies

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 6.8m Ω @ 80A, 10V +5V, -16V 5700pF @ 25V 80nC @ 10V 30V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

IPD80P03P4L07ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 88W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 88W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 130μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 4ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +5V, -16V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 5V
Max Dual Supply Voltage -30V
Drain-source On Resistance-Max 0.0068Ohm
Pulsed Drain Current-Max (IDM) 320A
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.61708 $1.23416
5,000 $0.58622 $2.9311
12,500 $0.56419 $6.77028
IPD80P03P4L07ATMA1 Product Details

IPD80P03P4L07ATMA1 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15 ns.Peak drain current is 320A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 5V to 1.In addition to -30V, it supports dual voltages up to the maximum.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

IPD80P03P4L07ATMA1 Features


a continuous drain current (ID) of 80A
the turn-off delay time is 15 ns
based on its rated peak drain current 320A.
a 30V drain to source voltage (Vdss)


IPD80P03P4L07ATMA1 Applications


There are a lot of Infineon Technologies
IPD80P03P4L07ATMA1 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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