SCTW35N65G2V datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
SCTW35N65G2V Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~200°C TJ
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
240W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
67m Ω @ 20A, 20V
Vgs(th) (Max) @ Id
5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1370pF @ 400V
Current - Continuous Drain (Id) @ 25°C
45A Tc
Gate Charge (Qg) (Max) @ Vgs
73nC @ 20V
Drain to Source Voltage (Vdss)
650V
Drive Voltage (Max Rds On,Min Rds On)
18V 20V
Vgs (Max)
+22V, -10V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$19.57000
$19.57
500
$19.3743
$9687.15
1000
$19.1786
$19178.6
1500
$18.9829
$28474.35
2000
$18.7872
$37574.4
2500
$18.5915
$46478.75
SCTW35N65G2V Product Details
SCTW35N65G2V Description
This silicon carbide power MOSFET device is developed using advanced and innovative second generation silicon carbide MOSFET technology from STMicroelectronics. The device has extremely low on-resistance per unit area and very good switching performance. The change of switching loss has almost nothing to do with the junction temperature.
SCTW35N65G2V Features
? Very fast and robust intrinsic body diode
? Extremely low gate charge and input capacitance
? Very high operating junction temperature capability (TJ = 200°C)