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SCTW35N65G2V

SCTW35N65G2V

SCTW35N65G2V

STMicroelectronics

SCTW35N65G2V datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

SCTW35N65G2V Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~200°C TJ
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 240W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 67m Ω @ 20A, 20V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 400V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Gate Charge (Qg) (Max) @ Vgs 73nC @ 20V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 18V 20V
Vgs (Max) +22V, -10V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $19.57000 $19.57
500 $19.3743 $9687.15
1000 $19.1786 $19178.6
1500 $18.9829 $28474.35
2000 $18.7872 $37574.4
2500 $18.5915 $46478.75
SCTW35N65G2V Product Details

SCTW35N65G2V    Description


  This silicon carbide power MOSFET device is developed using advanced and innovative second generation silicon carbide MOSFET technology from STMicroelectronics. The device has extremely low on-resistance per unit area and very good switching performance. The change of switching loss has almost nothing to do with the junction temperature.

 

SCTW35N65G2V    Features


? Very fast and robust intrinsic body diode

? Extremely low gate charge and input capacitance

? Very high operating junction temperature capability (TJ = 200°C)


SCTW35N65G2V     Applications


? Switching mode power supply

? DC-DC converters

? Industrial motor control


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