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SI2312BDS-T1-GE3

SI2312BDS-T1-GE3

SI2312BDS-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 3.9A SOT23-3

SOT-23

SI2312BDS-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 31mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 750mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 750mW
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.9A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 8V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Nominal Vgs 8 V
Height 1.02mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.196538 $0.196538
10 $0.185413 $1.85413
100 $0.174918 $17.4918
500 $0.165017 $82.5085
1000 $0.155676 $155.676

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