IPD80R1K0CEBTMA1

new-10%

Manufacturer part number:IPD80R1K0CEBTMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-Ch 800V 5.7A DPAK-2

Case Package:SOT-23

Datasheet:IPD80R1K0CEBTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	83W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	83W
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	950m Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id	3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	785pF @ 100V
Current - Continuous Drain (Id) @ 25°C	5.7A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	72 ns
Continuous Drain Current (ID)	5.7A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	800V
Drain-source On Resistance-Max	0.95Ohm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free