IPD80R1K4CEATMA1 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 570pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.9A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 72 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 1.4Ohm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 800V, it supports the maximal dual supply voltage.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IPD80R1K4CEATMA1 Features

a continuous drain current (ID) of 3.9A
the turn-off delay time is 72 ns
single MOSFETs transistor is 1.4Ohm
a 800V drain to source voltage (Vdss)

IPD80R1K4CEATMA1 Applications

There are a lot of Infineon Technologies
IPD80R1K4CEATMA1 applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools