IPD90R1K2C3BTMA1

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Manufacturer part number:IPD90R1K2C3BTMA1

Manufacturer:Infineon Technologies

Description:MOSFET Transistor, N Channel, 5.1 A, 900 V, 0.94 ohm, 10 V, 3 V

Case Package:SOT-23

Datasheet:IPD90R1K2C3BTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id	3.5V @ 310μA
Input Capacitance (Ciss) (Max) @ Vds	710pF @ 100V
Current - Continuous Drain (Id) @ 25°C	5.1A Tc
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-252AA
Drain Current-Max (Abs) (ID)	5.1A
Pulsed Drain Current-Max (IDM)	10A
DS Breakdown Voltage-Min	900V
Avalanche Energy Rating (Eas)	68 mJ
RoHS Status	RoHS Compliant