PSMN013-100ES,127

new-10%

Manufacturer part number:PSMN013-100ES,127

Manufacturer:Nexperia USA Inc.

Description:PSMN013-100ES - N-channel 100V 13.9m? standard level MOSFET in I2PAK.

Case Package:SOT-23

Datasheet:PSMN013-100ES,127 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Pin Count	3
Power Dissipation-Max	170W Tc
Element Configuration	Single
Power Dissipation	170W
Turn On Delay Time	20.7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	13.9m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3195pF @ 50V
Current - Continuous Drain (Id) @ 25°C	68A Tc
Gate Charge (Qg) (Max) @ Vgs	59nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	52.5 ns
Continuous Drain Current (ID)	68A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain to Source Breakdown Voltage	90V
Radiation Hardening	No
RoHS Status	RoHS Compliant