IRF6614TR1

new-10%

Manufacturer part number:IRF6614TR1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V DIRECTFET-ST

Case Package:SOT-23

Datasheet:IRF6614TR1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric ST
Number of Pins	7
Supplier Device Package	DIRECTFET™ ST
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Resistance	8.3mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	2.1W Ta 42W Tc
Power Dissipation	2.1W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.3mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2560pF @ 20V
Current - Continuous Drain (Id) @ 25°C	12.7A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 4.5V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	18 ns
Reverse Recovery Time	15 ns
Continuous Drain Current (ID)	10.1A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Input Capacitance	2.56nF
Drain to Source Resistance	5.9mOhm
Rds On Max	8.3 mΩ
Nominal Vgs	1.8 V
Width	3.95mm
REACH SVHC	No SVHC
RoHS Status	Non-RoHS Compliant