STS8DN3LLH5

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Manufacturer part number:STS8DN3LLH5

Manufacturer:STMicroelectronics

Description:STS8DN3LLH5 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STS8DN3LLH5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ V
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	19MOhm
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Power
Max Power Dissipation	2.7W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STS8DN
Pin Count	8
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.7W
Turn On Delay Time	4 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	19m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	724pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	5.4nC @ 4.5V
Rise Time	4.2ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	3.5 ns
Turn-Off Delay Time	21.1 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	22V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	40A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free