ZXMN2A04DN8TA

new-10%

Manufacturer part number:ZXMN2A04DN8TA

Manufacturer:Diodes Incorporated

Description:Trans MOSFET N-CH 20V 7.7A 8-Pin SOIC T/R

Case Package:SOT-23

Datasheet:ZXMN2A04DN8TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	25mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Powers
Voltage - Rated DC	20V
Max Power Dissipation	2.1W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	6A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Turn On Delay Time	7.9 ns
Power - Max	1.8W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 5.9A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds	1880pF @ 10V
Current - Continuous Drain (Id) @ 25°C	5.9A
Gate Charge (Qg) (Max) @ Vgs	22.1nC @ 5V
Rise Time	14.8ns
Fall Time (Typ)	30.6 ns
Turn-Off Delay Time	50.5 ns
Continuous Drain Current (ID)	7.7A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	5.9A
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free