IPI111N15N3GAKSA1

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Manufacturer part number:IPI111N15N3GAKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 150V 83A TO262-3

Case Package:SOT-23

Datasheet:IPI111N15N3GAKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	214W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	214W
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11.1m Ω @ 83A, 10V
Vgs(th) (Max) @ Id	4V @ 160μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3230pF @ 75V
Current - Continuous Drain (Id) @ 25°C	83A Tc
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Rise Time	35ns
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	83A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	150V
Height	9.45mm
Length	10.36mm
Width	4.52mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead