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2SK3700(F)

2SK3700(F)

2SK3700(F)

Toshiba Semiconductor and Storage

Trans MOSFET N-CH 900V 5A 3-Pin(3+Tab) TO-3PN

SOT-23

2SK3700(F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Power Dissipation 150W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 900V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 30V
Height 19mm
Length 15.9mm
Width 4.8mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.210342 $2.210342
10 $2.085228 $20.85228
100 $1.967196 $196.7196
500 $1.855846 $927.923
1000 $1.750798 $1750.798

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