IPI120N06S4H1AKSA1

new-10%

Manufacturer part number:IPI120N06S4H1AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 120A TO262-3

Case Package:SOT-23

Datasheet:IPI120N06S4H1AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	250W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds	21900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	270nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.0024Ohm
Pulsed Drain Current-Max (IDM)	480A
Avalanche Energy Rating (Eas)	1060 mJ
RoHS Status	RoHS Compliant