SI7621DN-T1-GE3

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Manufacturer part number:SI7621DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET P-CH 20V 4A 8-Pin PowerPAK 1212 T/R

Case Package:SOT-23

Datasheet:SI7621DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	S-XDSO-C5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.1W Ta 12.5W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 3.9A, 4.5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	6.2nC @ 5V
Rise Time	75ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.09Ohm
DS Breakdown Voltage-Min	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free