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IXFK260N17T

IXFK260N17T

IXFK260N17T

IXYS

MOSFET N-CH 170V 260A TO-264

SOT-23

IXFK260N17T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series GigaMOS™
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1670W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 24000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 260A Tc
Gate Charge (Qg) (Max) @ Vgs 400nC @ 10V
Drain to Source Voltage (Vdss) 170V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 260A
Drain-source On Resistance-Max 0.0065Ohm
Pulsed Drain Current-Max (IDM) 700A
DS Breakdown Voltage-Min 170V
RoHS Status RoHS Compliant

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