IXFN80N60P3

new-10%

Manufacturer part number:IXFN80N60P3

Manufacturer:IXYS

Description:MOSFET N-CH 600V 66A SOT-227B

Case Package:SOT-23

Datasheet:IXFN80N60P3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Chassis Mount, Panel, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	HiPerFET™, Polar3™
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Power Dissipation-Max	960W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	960W
Case Connection	ISOLATED
Turn On Delay Time	48 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	13100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	66A Tc
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Turn-Off Delay Time	87 ns
Continuous Drain Current (ID)	66A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.07Ohm
Pulsed Drain Current-Max (IDM)	200A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	2000 mJ
Height	9.6mm
Length	38.23mm
Width	25.07mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free