IRF610LPBF

new-10%

Manufacturer part number:IRF610LPBF

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB

Case Package:SOT-23

Datasheet:IRF610LPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3W Ta 36W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	8.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.5 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.3A Tc
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 10V
Rise Time	17ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8.9 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	3.3A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
DS Breakdown Voltage-Min	200V
Height	9.01mm
Length	10.41mm
Width	4.7mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant