IPI530N15N3GXKSA1

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Manufacturer part number:IPI530N15N3GXKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 150V 21A TO262-3

Case Package:SOT-23

Datasheet:IPI530N15N3GXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	52 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	68W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	53m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	4V @ 35μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	887pF @ 75V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	133 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	150V
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	84A
Avalanche Energy Rating (Eas)	60 mJ
Height	9.45mm
Length	10.36mm
Width	4.52mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free