IPI60R165CPAKSA1

new-10%

Manufacturer part number:IPI60R165CPAKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-262

Case Package:SOT-23

Datasheet:IPI60R165CPAKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	CoolMOS™
Pbfree Code	no
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	192W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	165m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	3.5V @ 790μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 100V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
Rise Time	5ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain-source On Resistance-Max	0.165Ohm
Pulsed Drain Current-Max (IDM)	61A
Avalanche Energy Rating (Eas)	522 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead