SPB02N60C3ATMA1

new-10%

Manufacturer part number:SPB02N60C3ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:SPB02N60C3ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	25W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	25W
Turn On Delay Time	6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 80μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.8A Tc
Gate Charge (Qg) (Max) @ Vgs	12.5nC @ 10V
Rise Time	3ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	68 ns
Continuous Drain Current (ID)	1.8A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain-source On Resistance-Max	3Ohm
Pulsed Drain Current-Max (IDM)	5.4A
Avalanche Energy Rating (Eas)	50 mJ
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead