IPI65R110CFDXKSA1

new-10%

Manufacturer part number:IPI65R110CFDXKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V 31.2A TO262

Case Package:SOT-23

Datasheet:IPI65R110CFDXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Supplier Device Package	PG-TO262-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	CoolMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	277.8W Tc
Element Configuration	Single
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.3mA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3240pF @ 100V
Current - Continuous Drain (Id) @ 25°C	31.2A Tc
Gate Charge (Qg) (Max) @ Vgs	118nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	68 ns
Continuous Drain Current (ID)	31.2A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	3.24nF
Drain to Source Resistance	110mOhm
Rds On Max	110 mΩ
RoHS Status	RoHS Compliant