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IPI70N10SL16AKSA1

IPI70N10SL16AKSA1

IPI70N10SL16AKSA1

Infineon Technologies

Trans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-262

SOT-23

IPI70N10SL16AKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series SIPMOS®
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 250W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 70 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 2mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4540pF @ 25V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 95 ns
Turn-Off Delay Time 250 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.025Ohm
Pulsed Drain Current-Max (IDM) 280A
Avalanche Energy Rating (Eas) 700 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $1.82876 $914.38

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