IXTQ50N25T

new-10%

Manufacturer part number:IXTQ50N25T

Manufacturer:IXYS

Description:MOSFET N-CH 250V 50A TO-3P

Case Package:SOT-23

Datasheet:IXTQ50N25T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Pure Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	400W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	400W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	50A
Drain-source On Resistance-Max	0.05Ohm
DS Breakdown Voltage-Min	250V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free